IXTK110N20L2

IXYS · Linear L2™ Series

MOSFET N-CH 200V 110A TO264

IXYS IXTK110N20L2
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Technical specifications

IXTK110N20L2 specifications
Parameter / AttributeSpecification / Value
SeriesLinear L2™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation960W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id4.5V @ 3mA
Rds on (Max) @ id, vgs24mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs500 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds23000 pF @ 25 V
IXTK110N20L2
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