IXTH3N200P3HV

IXYS · Polar P3™ Series

MOSFET N-CH 2000V 3A TO247

IXYS IXTH3N200P3HV
[IN STOCK] In Stock: 1 pcs
$76.07/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IXTH3N200P3HV specifications
Parameter / AttributeSpecification / Value
SeriesPolar P3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage2000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation520W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs8Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1860 pF @ 25 V
IXTH3N200P3HV
[ALLOC] verified
Quote