Skip to main content
IXYS IXTH34N65X2

IXYS IXTH34N65X2

MPNIXTH34N65X2
Active

MOSFET N-CH 650V 34A TO247

$7.16Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesUltra X2
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTH34N65X2 specifications
ParameterValue
SeriesUltra X2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation540W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 4mA
Rds on (Max) @ id, vgs105mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3120 pF @ 25 V