IXTH16N20D2

IXYS · Depletion Series

MOSFET N-CH 200V 16A TO247

IXYS IXTH16N20D2
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Technical specifications

IXTH16N20D2 specifications
Parameter / AttributeSpecification / Value
SeriesDepletion
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation695W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-247-3
Rds on (Max) @ id, vgs73mOhm @ 8A, 0V
Gate charge (Qg) (Max) @ vgs208 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds5500 pF @ 25 V
IXTH16N20D2
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