IXTH15N50L2

IXYS · Linear L2™ Series

MOSFET N-CH 500V 15A TO247

IXYS IXTH15N50L2
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Technical specifications

IXTH15N50L2 specifications
Parameter / AttributeSpecification / Value
SeriesLinear L2™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs480mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs123 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4080 pF @ 25 V
IXTH15N50L2
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