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IXYS IXTA86N20T

IXYS IXTA86N20T

MPNIXTA86N20T
Active

MOSFET N-CH 200V 86A TO263

$6.22Ref. price · indicative, final on quote
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesTrench
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTA86N20T specifications
ParameterValue
SeriesTrench
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C86A (Tc)
Power dissipation480W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs29mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4500 pF @ 25 V