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IXYS IXTA3N50D2

IXYS IXTA3N50D2

MPNIXTA3N50D2
Active

MOSFET N-CH 500V 3A TO263

$4.31Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTA3N50D2 specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds on (Max) @ id, vgs1.5Ohm @ 1.5A, 0V
Gate charge (Qg) (Max) @ vgs40 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1070 pF @ 25 V