IXTA3N100D2
IXYS · Depletion Series
MOSFET N-CH 1000V 3A TO263
[IN STOCK] In Stock: 137 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | Depletion |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1000 V |
| Current - continuous drain (Id) @ 25°C | 3A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Depletion Mode |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Rds on (Max) @ id, vgs | 5.5Ohm @ 1.5A, 0V |
| Gate charge (Qg) (Max) @ vgs | 37.5 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1020 pF @ 25 V |
IXTA3N100D2
[ALLOC] verified