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IXYS IXTA05N100HV

IXYS IXTA05N100HV

MPNIXTA05N100HV
Active

MOSFET N-CH 1000V 750MA TO263

$4.97Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTA05N100HV specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C750mA (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs17Ohm @ 375mA, 10V
Gate charge (Qg) (Max) @ vgs7.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds260 pF @ 25 V