IXFH30N50Q3

IXYS · HiPerFET™, Q3 Class Series

MOSFET N-CH 500V 30A TO247AD

IXYS IXFH30N50Q3
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Technical specifications

IXFH30N50Q3 specifications
Parameter / AttributeSpecification / Value
SeriesHiPerFET™, Q3 Class
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation690W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id6.5V @ 4mA
Rds on (Max) @ id, vgs200mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs62 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3200 pF @ 25 V
IXFH30N50Q3
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