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IXYS IXFH20N85X

IXYS IXFH20N85X

MPNIXFH20N85X
Active

MOSFET N-CH 850V 20A TO247

$9.95Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHiPerFET™, Ultra X
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXFH20N85X specifications
ParameterValue
SeriesHiPerFET™, Ultra X
FET typeN-Channel
MountingThrough Hole
Drain to source voltage850 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation540W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5.5V @ 2.5mA
Rds on (Max) @ id, vgs330mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1660 pF @ 25 V