IXFH16N120P

IXYS · HiPerFET™, Polar Series

MOSFET N-CH 1200V 16A TO247AD

IXYS IXFH16N120P
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Technical specifications

IXFH16N120P specifications
Parameter / AttributeSpecification / Value
SeriesHiPerFET™, Polar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation660W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id6.5V @ 1mA
Rds on (Max) @ id, vgs950mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6900 pF @ 25 V
IXFH16N120P
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