IXBH42N170
IXYS · BIMOSFET™ Series
IGBT 1700V 80A 360W TO247
[IN STOCK] In Stock: 9 pcs
MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | BIMOSFET™ |
| Input type | Standard |
| Mounting | Through Hole |
| Voltage - collector emitter breakdown | 1700 V |
| Current - collector (Ic) | 80 A |
| Current - collector pulsed | 300 A |
| Power - max | 360 W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Gate charge | 188 nC |
| Case | TO-247-3 |
| Vce(on) (Max) @ vge, ic | 2.8V @ 15V, 42A |
| Reverse recovery time | 1.32 µs |
IXBH42N170
[ALLOC] verified