IXDN602SIA

IXYS Integrated Circuits Division

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division IXDN602SIA
Download datasheet (PDF)
[IN STOCK] In Stock: 111 pcs
$2.35/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IXDN602SIA specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel, P-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 35V
Logic voltage - VIL, VIH0.8V, 3V
Current - peak output (Source, sink)2A, 2A
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7.5ns, 6.5ns
IXDN602SIA
[ALLOC] verified
Quote