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Infineon Technologies IRFP4568PBFXKMA1 — Discrete Semiconductors

Infineon IRFP4568PBFXKMA1 N-Channel MOSFET, 150 V, 171 A

MPNIRFP4568PBFXKMA1
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Infineon HEXFET® IRFP4568PBFXKMA1, N-Channel MOSFET, 150 V Vdss, 171 A Id, 5.9 mOhm Rds(on) @ 103 A, 10 V, 227 nC Qg, TO-247AC, -55°C to 175°C.

$9.0700Ref. price · indicative, final on quote
Infineon Technologies IRFP4568PBFXKMA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRFP4568PBFXKMA1 specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C171A (Tc)
Power dissipation517W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs5.9mOhm @ 103A, 10V
Gate charge (Qg) (Max) @ vgs227 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10470 pF @ 50 V

Product details

150 V, 171 A N-channel — high-current power switch

227 nC gate charge — driver selection

For a 100 kHz switching frequency, the average gate drive power is about 227 nC × 10 V × 100 kHz = 0.23 W, but the peak current requirement can be several amperes for fast edges. Pair this MOSFET with a driver capable of sourcing and sinking at least 2 A to 4 A peak for efficient switching.

517 W power dissipation — thermal design

The TO-247-3 package's large tab allows bolting to a heatsink, but the thermal interface material and mounting torque directly affect the thermal resistance. At 175°C maximum junction temperature, the safe operating area (SOA) curves in the datasheet should be consulted for pulsed versus continuous operation.

This is a standard part for ongoing designs and volume production, not a last-time-buy or NRND item. For dual-sourcing flexibility, the base part number IRFP4568PBF (without the XKMA1 suffix) is the same die in the same package, differing only in packaging and traceability — functionally identical for BOM purposes.

Frequently asked questions

What is the Rds(on) of IRFP4568PBFXKMA1?

This is the value used for conduction loss calculations in high-current switching applications.

IRFP4568PBFXKMA1 vs IRFP4568PBF — which is better?

The IRFP4568PBFXKMA1 and IRFP4568PBF are the same Infineon HEXFET die in the same TO-247-3 package. The XKMA1 suffix denotes a specific ordering code variant (often tape-and-reel or a specific packaging option), but the electrical ratings — 150 V Vdss, 171 A Id, 5.9 mOhm Rds(on) — are identical. For BOM purposes they are interchangeable; choose based on distributor availability and pricing.