Infineon Technologies IPN5 Series

4 variants · Infineon Technologies

About the Infineon Technologies IPN5 Series

The Infineon Technologies IPN5 Series series groups 4 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-261-4, TO-261AA, drain to source voltage of 500 V and drive voltage (Max rds on, min rds on) of 13V. Variants differ by current - continuous drain (Id) @ 25°C, gate charge (Qg) (Max) @ vgs and input capacitance (Ciss) (Max) @ vds, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below.

Select a variant by

Current - continuous drain (Id) @ 25°C: 2.6A (Tc) · 3.6A (Tc) · 4.8A (Tc)
Gate charge (Qg) (Max) @ vgs: 4.3 nC @ 10 V · 6 nC @ 10 V · 8.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 84 pF @ 100 V · 124 pF @ 100 V · 178 pF @ 100 V
Rds on (Max) @ id, vgs: 1.4Ohm @ 900mA, 13V · 2Ohm @ 600mA, 13V · 3Ohm @ 400mA, 13V
Vgs(th) (Max) @ id: 3.5V @ 30µA · 3.5V @ 50µA · 3.5V @ 70µA

Shared specifications

Case: TO-261-4, TO-261AA
Drain to source voltage: 500 V
Drive voltage (Max rds on, min rds on): 13V
FET type: N-Channel
Mounting: Surface Mount
Operating temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR); Cut Tape (CT)
Power dissipation: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Vgs: ±20V

Variant comparison

Parameter	IPN50R3K0CEATMA1	IPN50R1K4CEATMA1	IPN50R2K0CEATMA1
Current - continuous drain (Id) @ 25°C	2.6A (Tc)	4.8A (Tc)	3.6A (Tc)
Gate charge (Qg) (Max) @ vgs	4.3 nC @ 10 V	8.2 nC @ 10 V	6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	84 pF @ 100 V	178 pF @ 100 V	124 pF @ 100 V
Rds on (Max) @ id, vgs	3Ohm @ 400mA, 13V	1.4Ohm @ 900mA, 13V	2Ohm @ 600mA, 13V
Vgs(th) (Max) @ id	3.5V @ 30µA	3.5V @ 70µA	3.5V @ 50µA

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