Skip to main content
Infineon Technologies IPN50R1K4CEATMA1

Infineon IPN50R1K4CEATMA1 N-Channel MOSFET, 500V 4.8A SOT223

MPNIPN50R1K4CEATMA1
End of Life

Infineon CoolMOS™ CE series, IPN50R1K4CEATMA1, N-Channel MOSFET, 500 V Vdss, 4.8 A Id, 1.4 Ohm Rds(on) at 13 V gate drive, PG-SOT223-3 surface-mount package, -40°C to 150°C junction temperature.

$0.6Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPN50R1K4CEATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C4.8A (Tc)
Power dissipation5W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 70µA
Rds on (Max) @ id, vgs1.4Ohm @ 900mA, 13V
Gate charge (Qg) (Max) @ vgs8.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds178 pF @ 100 V

Product details

500 V, 4.8 A CoolMOS CE in a compact SOT223

It packs a 1.4 Ohm maximum on-resistance — specified at 900 mA drain current with 13 V gate drive — into the PG-SOT223-3 surface-mount footprint. The 150°C maximum junction temperature gives headroom for hot environments like enclosed industrial PSUs or LED drivers.

The 1.4 Ohm Rds(on) at 13 V gate drive is the figure to use for conduction-loss calculations at the nominal operating point. At 900 mA, that is about 1.1 W of conduction loss — well within the 5 W package limit, but the junction temperature rise will cut into that margin as ambient climbs. The total gate charge of 8.2 nC at 10 V means a modest gate driver can switch this FET at 100 kHz with under 1 mA average drive current; switching losses stay low enough for most flyback and single-switch forward topologies. Input capacitance is 178 pF at 100 V drain bias — a light load on the driver, and the Miller plateau will be short, which helps keep the turn-on and turn-off delays in the tens of nanoseconds range. For a 100 kHz hard-switched design, the crossover losses will be dominated by the output capacitance (Coss) rather than the gate charge, so plan for a snubber or a valley-switching controller if efficiency targets are tight.

Package thermal reality — SOT223 at 5 W

The PG-SOT223-3 package is rated for 5 W total power dissipation at the case. That is a firm ceiling — the copper pad area on the PCB under the drain tab sets the actual thermal resistance. For continuous operation at 4.8 A, the conduction loss alone will push past 5 W unless the Rds(on) is de-rated for temperature (it roughly doubles at 150°C junction). In practice, this part is run at 1-2 A continuous with good PCB heatsinking, or used in pulsed applications like inrush limiting. The 150°C ceiling is a hard stop — the plastic SOT223 will not survive sustained operation above that, and the solder joints fatigue faster at the high end of the range. Keep the junction below 125°C for reliability in long-life designs.

Sourcing and lifecycle posture

Infineon continues to manufacture the CoolMOS CE series in the SOT223 package. No known PCN on this specific variant; the date-code and marking traceability back to Infineon's fabs is clean through the authorized channel.

Frequently asked questions

What is the Rds(on) of IPN50R1K4CEATMA1?

Maximum on-resistance is 1.4 Ohm, specified at 900 mA drain current with 13 V gate-to-source drive. This is the value to use for worst-case conduction loss calculations at 25°C junction; expect Rds(on) to approximately double at 150°C junction.

What is the gate charge of IPN50R1K4CEATMA1?

Total gate charge is 8.2 nC maximum at 10 V gate drive. This low Qg keeps switching losses manageable in hard-switched topologies up to several hundred kHz.