IPN50R3K0CEATMA1 - Infineon Technologies
MPNIPN50R3K0CEATMA1
End of Life
MOSFET N-CH 500V 2.6A SOT223
$0.57Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesCoolMOS™ CE
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CE |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 13V |
| Current - continuous drain (Id) @ 25°C | 2.6A (Tc) |
| Power dissipation | 5W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3.5V @ 30µA |
| Rds on (Max) @ id, vgs | 3Ohm @ 400mA, 13V |
| Gate charge (Qg) (Max) @ vgs | 4.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 84 pF @ 100 V |