SPW17N80C3FKSA1

Infineon Technologies · CoolMOS™ Series

Infineon CoolMOS™ SPW17N80C3FKSA1 N-channel MOSFET, 800 V drain-source, 17 A continuous drain, 290 mOhm Rds(on) at 10 V gate drive, TO-247-3 through-hole package, -55°C to 150°C junction temperature.

Infineon Technologies SPW17N80C3FKSA1
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Technical specifications

SPW17N80C3FKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation227W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id3.9V @ 1mA
Rds on (Max) @ id, vgs290mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs177 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2320 pF @ 25 V

Technical details

290 mOhm on-resistance — the conduction loss number

That 290 mOhm at 11 A is the number to use for worst-case conduction loss in the thermal loop — at 17 A the I²R loss hits about 84 W, which is within the 227 W dissipation limit but leaves little margin for switching losses in a hard-switched topology.

177 nC gate charge — switching-speed budget

Total gate charge is 177 nC at 10 V. That's a moderate Qg for an 800 V, 17 A device — expect a gate-driver capable of sourcing at least 1 A peak to keep switching transitions under 200 ns.

SPW17N80C3FKSA1
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