SPW16N50C3

Infineon Technologies · CoolMOS™ Series

Infineon CoolMOS™ SPW16N50C3, N-Channel MOSFET, 500 V Vdss, 16 A Id, 280 mOhm Rds(on) at 10 V, TO-247-3 through-hole package, -55 to 150 °C junction temperature.

Infineon Technologies SPW16N50C3
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Technical specifications

SPW16N50C3 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation160W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id3.9V @ 675µA
Rds on (Max) @ id, vgs280mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 25 V

Technical details

The Infineon SPW16N50C3 is a 500 V, 16 A N-channel CoolMOS power MOSFET in a TO-247-3 through-hole package.

Thermal and ruggedness envelope

The 160 W power dissipation at case temperature is a package-limited figure — the TO-247-3 can sink that with a proper heatsink and forced air, but the junction-to-case thermal path needs a good thermal interface. Input capacitance of 1600 pF at 25 V drain-source is typical for this class; it sets the switching loss at higher frequencies, so the designer should budget for it in the gate-drive loop.

SPW16N50C3
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