Infineon CoolMOS™ SPW12N50C3, N-Channel MOSFET, 500 Vdss, 11.6 A continuous drain, 380 mOhm Rds(on) at 10 V gate drive, 49 nC gate charge, TO-247-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11.6A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.9V @ 500µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 49 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 25 V |
The Infineon SPW12N50C3 is a 500 V N-channel CoolMOS power MOSFET in a TO-247-3 through-hole package.
The TO-247-3 package (PG-TO247-3-21) bolts to a heatsink with a single M3 screw; the exposed metal tab is the drain.
Infineon lists it as current, with ROHS3 compliance. No last-time-buy notice or EOL warning has been issued.
Maximum on-resistance is 380 mOhm at 7 A drain current with 10 V gate drive.
Both are 500 V CoolMOS N-channel MOSFETs in TO-247. The SPW12N50C3 has a lower Rds(on) (380 mOhm vs the SPW11N50C3's higher value) and a higher continuous drain current (11.6 A vs the SPW11N50C3's lower rating). The SPW11N50C3 is the lighter-duty sibling for designs where the extra headroom is not needed.