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Infineon Technologies SPW11N60S5
Infineon Technologies

Infineon SPW11N60S5 CoolMOS N-Channel MOSFET

MPNSPW11N60S5
End of Life

Infineon CoolMOS™ series, SPW11N60S5, N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on), TO-247-3 through-hole, -55°C to 150°C junction temperature.

$1.74Ref. price · indicative, final on quote
SPW11N60S5 datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SPW11N60S5 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5.5V @ 500µA
Rds on (Max) @ id, vgs380mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1460 pF @ 25 V

Product details

600 V CoolMOS™ N-channel MOSFET in TO-247

The Infineon SPW11N60S5 is a 600 V N-channel power MOSFET from the CoolMOS™ series, built on a charge-compensation technology that reduces on-resistance and gate charge compared to conventional planar MOSFETs of the same voltage class. It is housed in a TO-247-3 through-hole package (PG-TO247-3-21), rated for continuous drain current of 11 A at 25°C case temperature, with a maximum Rds(on) of 380 mOhm at 10 V gate drive. The wide junction temperature range of -55°C to 150°C suits it for industrial power supplies, welding inverters, UPS systems, and motor drives where 600 V bus rails are common and the through-hole package allows heatsink mounting for thermal management.

Lifecycle and supply

The SPW11N60S5 carries an active lifecycle status from Infineon and is ROHS3 compliant. It remains a current-production part with no last-time-buy or obsolescence notice.

Frequently asked questions

What is the Rds(on) of SPW11N60S5?

Maximum on-resistance is 380 mOhm at 7 A drain current with 10 V gate-to-source drive.

SPW11N60S5 vs IRFP460: which is better for my design?

The IRFP460 is a 500 V, 20 A planar MOSFET with higher Rds(on) and gate charge than the 600 V CoolMOS SPW11N60S5. For a 600 V bus, the SPW11N60S5 offers the voltage headroom and lower switching losses from CoolMOS technology. The IRFP460 may suit lower-voltage, higher-current designs where its lower cost and proven availability matter more than efficiency.