Infineon CoolMOS™ series, SPW11N60S5, N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on), TO-247-3 through-hole, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5.5V @ 500µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 54 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1460 pF @ 25 V |
It is housed in a TO-247-3 through-hole package (PG-TO247-3-21), rated for continuous drain current of 11 A at 25°C case temperature, with a maximum Rds(on) of 380 mOhm at 10 V gate drive.
It remains a current-production part with no last-time-buy or obsolescence notice.
Maximum on-resistance is 380 mOhm at 7 A drain current with 10 V gate-to-source drive.
The IRFP460 is a 500 V, 20 A planar MOSFET with higher Rds(on) and gate charge than the 600 V CoolMOS SPW11N60S5. For a 600 V bus, the SPW11N60S5 offers the voltage headroom and lower switching losses from CoolMOS technology. The IRFP460 may suit lower-voltage, higher-current designs where its lower cost and proven availability matter more than efficiency.