Infineon SPW11N60C3 CoolMOS™ N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on) @ 7A/10V, 60nC Qg, TO-247-3 package, -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.9V @ 500µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 25 V |
It delivers 11 A continuous drain current at 25°C case temperature and features a typical on-resistance of 380 mOhm at 7 A with a 10 V gate drive.
The TO-247-3 package (PG-TO247-3-21) is a standard through-hole footprint for high-power through-hole devices. The large tab provides a low-thermal-resistance path to the heatsink.
The SPW11N60C3 is a 600 V N-channel CoolMOS MOSFET rated for 11 A continuous drain current at 25°C case temperature, with a maximum on-resistance of 380 mOhm at 7 A and 10 V gate drive. Gate charge is 60 nC at 10 V, input capacitance is 1200 pF at 25 V drain bias, and the junction temperature range is -55°C to 150°C. It comes in a TO-247-3 package.
Yes, the SPW11N60C3 is ROHS3 compliant.
The maximum on-resistance is 380 mOhm at 7 A drain current with a 10 V gate drive.