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Infineon Technologies SPU01N60C3

Infineon SPU01N60C3 CoolMOS N-Ch MOSFET, 600V 800mA

MPNSPU01N60C3
End of Life

Infineon CoolMOS™ SPU01N60C3, N-Channel MOSFET, 600 V Vdss, 800 mA Id, 6 Ohm Rds(on) @ 10 V, ±20 V Vgs, TO-251-3 (PG-TO251-3), Through Hole, -55 to 150 °C.

$0.39Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPU01N60C3 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C800mA (Tc)
Power dissipation11W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs6Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds100 pF @ 25 V

Product details

The through-hole TO-251-3 (IPak) package suits compact board layouts where a heatsink tab is soldered to the PCB copper.

The 3.9 V maximum gate threshold at 250 µA means a 5 V logic gate drive may not fully enhance the channel; the datasheet recommends 10 V drive for the rated Rds(on).

No end-of-life notice or last-time-buy schedule is in effect. For dual-sourcing or supply resilience, Infineon's CoolMOS portfolio includes several 600 V N-channel parts in the same TO-251 package; the closest functional match would share the same Vdss and current class, but no official cross-reference is listed in the evidence.

Frequently asked questions

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Is SPU01N60C3 still in production?

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What is the lead time for SPU01N60C3?

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What is the equivalent or cross reference for SPU01N60C3?

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What is the Vgs threshold voltage of SPU01N60C3?

Designers must verify gate drive compatibility to ensure proper switching.

How much does SPU01N60C3 cost?

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