600 V CoolMOS N-channel — what this part is and where it fits
The Infineon SPU01N60C3 is an N-channel power MOSFET from the CoolMOS™ series, built on a charge-compensation technology that reduces on-resistance per die area. Rated for 600 V drain-to-source (Vdss) and 800 mA continuous drain current at 25 °C case temperature, it targets high-voltage switching applications such as flyback converters, PFC stages, auxiliary power supplies, and LED lighting drivers. The through-hole TO-251-3 (IPak) package suits compact board layouts where a heatsink tab is soldered to the PCB copper. The -55 to 150 °C junction temperature range covers industrial and automotive under-hood environments without derating concerns at the high end.
Key ratings and what they mean for the BOM
The 3.9 V maximum gate threshold at 250 µA means a 5 V logic gate drive may not fully enhance the channel; the datasheet recommends 10 V drive for the rated Rds(on). Input capacitance of 100 pF at 25 V Vds keeps switching losses moderate at frequencies up to a few hundred kilohertz.
Lifecycle and sourcing reality
The SPU01N60C3 carries an Active lifecycle status and is ROHS3 compliant. No end-of-life notice or last-time-buy schedule is in effect. For dual-sourcing or supply resilience, Infineon's CoolMOS portfolio includes several 600 V N-channel parts in the same TO-251 package; the closest functional match would share the same Vdss and current class, but no official cross-reference is listed in the evidence.