Infineon CoolMOS™ series, SPS01N60C3BKMA1, N-Channel MOSFET, 600V Vdss, 800mA Id, 6 Ohm Rds(on) @ 10V, PG-TO251-3 through hole, -55 to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 800mA (Tc) |
| Power dissipation | 11W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Stub Leads, IPak |
| Vgs(th) (Max) @ id | 3.9V @ 250µA |
| Rds on (Max) @ id, vgs | 6Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 100 pF @ 25 V |
The 6 Ohm on-resistance at 10 V gate drive and 500 mA test current determines conduction loss. At 500 mA load, dissipation from Rds(on) alone is within the 11 W package limit.
For BOM planning, that removes the urgency to qualify a substitute — though having a second-source option in the CoolMOS family is always prudent for supply resilience.
Price directly affects BOM cost and sourcing decision.
Stock availability determines lead time and potential shortage risk.
Design engineers need to validate if part meets circuit requirements.
Sourcing may need alternative parts for multi-sourcing or if stock is low.
Regulatory compliance is mandatory for many markets.
Needed for reliability analysis in harsh environments.