SPP80P06PHXKSA1

Infineon Technologies · SIPMOS® Series

Infineon SIPMOS P-Channel MOSFET, 60V Vdss, 80A continuous drain, 23mOhm Rds(on) at 10V, 173nC gate charge, TO-220-3, -55°C to 175°C.

Infineon Technologies SPP80P06PHXKSA1
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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SPP80P06PHXKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesSIPMOS®
FET typeP-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation340W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 5.5mA
Rds on (Max) @ id, vgs23mOhm @ 64A, 10V
Gate charge (Qg) (Max) @ vgs173 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5033 pF @ 25 V

Technical details

60 V, 80 A P-channel switch — the load-budget anchor

This combination puts it in the high-current P-channel tier—useful for load switches, battery protection, and motor-drive high-side applications where an N-channel would need a charge-pump gate driver.

Thermal headroom and junction rating

That 175°C max junction temperature is the ceiling for sustained operation in high-ambient enclosures—think industrial motor drives or power supplies where the heatsink is shared. The wide temperature floor also suits cold-start environments like outdoor telecom cabinets.

This is a moderate drive load for a P-channel of this current rating. A gate driver that can source and sink a few amperes peak will keep switching losses in check at frequencies up to several tens of kHz.

Through-hole package — PG-TO220-3-1

The part comes in a standard TO-220-3 through-hole package, Infineon's PG-TO220-3-1 variant. The through-hole format simplifies heatsinking with a single screw or clip, and it's straightforward to hand-assemble or rework. No special soldering profile needed; standard wave or hand-solder works.

It is ROHS3 compliant.

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