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Infineon Technologies SPP80N06S-08

Infineon SPP80N06S-08 N-Channel MOSFET, 55 V, 80 A, 8 mOhm

MPNSPP80N06S-08
End of Life

Infineon Automotive SIPMOS® N-Channel Power MOSFET, SPP80N06S-08, 55 V Vdss, 80 A Id, 8 mOhm Rds(on) max @ 80 A / 10 V, 187 nC Qg, TO-220-3 (PG-TO220-3-1), -55 to 175 °C, AEC-Q101 qualified.

$1.16Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

SPP80N06S-08 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101, SIPMOS®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 240µA
Rds on (Max) @ id, vgs8mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs187 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3660 pF @ 25 V

Product details

AEC-Q101 and the 175 °C junction ceiling

The 175 °C Tj(max) is the absolute limit — above that, the die metallisation and wire bonds begin to degrade. For a 24 V or 48 V automotive rail (e.g., electric power steering, DC-DC converter, or motor pre-drive), the 55 V Vdss gives roughly 15 % headroom over a 48 V nominal bus after accounting for load-dump transients.

Gate charge and switching budget

The total gate charge is 187 nC at a 10 V gate drive. For a 100 kHz switching frequency, the average gate-drive current required is 187 nC × 100 kHz = 18.7 mA — well within the capability of a standard gate-driver IC. The input capacitance (Ciss) is 3660 pF at 25 V Vds, which sets the Miller plateau duration and the switching transition time. A gate resistor in the 10–22 Ω range typically controls the turn-on slew rate without excessive ringing on the TO-220-3 package's leadframe.

It is ROHS3 compliant. No official pin-compatible second source or successor is listed in the Infineon SIPMOS® family, so dual-sourcing would require a parametric match from another vendor's 55 V, 80 A, 8 mOhm TO-220 N-channel portfolio.

Frequently asked questions

What is the Rds(on) of SPP80N06S-08?

The maximum on-resistance is 8 mOhm at a drain current of 80 A and a gate-source voltage of 10 V. This is the conduction-loss spec for thermal design — actual Rds(on) rises with junction temperature per the normalised curve in the datasheet.

Is SPP80N06S-08 RoHS compliant?

Yes, the SPP80N06S-08 is ROHS3 compliant, meaning it meets the latest EU RoHS directive with no exempted substances above the threshold limits.

What is the gate charge of SPP80N06S-08?

The total gate charge (Qg) is 187 nC at a 10 V gate drive. This figure determines the average current required from the gate driver at a given switching frequency — for example, 18.7 mA at 100 kHz.

What is a replacement for SPP80N06S-08?

No official pin-compatible replacement or successor is listed in the Infineon SIPMOS® family. For a parametric match, look for a 55 V, 80 A, 8 mOhm N-channel MOSFET in a TO-220 package from another vendor — confirm the gate threshold voltage and gate charge align with your drive circuit before substituting.