Infineon CoolMOS™ N-Channel MOSFET, SPP17N80C3XKSA1, 800 V drain-source, 17 A continuous drain at 25°C, 290 mOhm max on-resistance at 11 A, 10 V gate drive, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 208W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.9V @ 1mA |
| Rds on (Max) @ id, vgs | 290mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 177 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2320 pF @ 25 V |
The SPP17N80C3XKSA1: The TO-220-3 through-hole package (PG-TO220-3-1) fits standard heatsink mounting for thermal management.
Input capacitance Ciss is 2320 pF at 25 V drain-source. On-resistance increases with junction temperature; derate continuous current for the operating temperature.
The maximum on-resistance is 290 mOhm at 11 A drain current with 10 V gate drive.