650 V CoolMOS for PFC and SMPS stages
It is specified for the 10 V gate-drive level typical of standard PWM controllers and gate-driver ICs.
Conduction and switching losses
Maximum on-resistance is 280 mOhm at 9.4 A drain current and 10 V gate drive. At 15 A the Rds(on) will be higher — budget 320–350 mOhm at full current and 100°C junction — which sets the conduction loss at roughly 7–8 W for a 5 A RMS load in a PFC stage. Total gate charge is 63 nC at 10 V. For a 100 kHz switching frequency the gate-drive power is about 63 mW, easily supplied by a standard driver IC, but the 1600 pF input capacitance at 25 V drain-source means the driver must source and sink several amperes during the Miller plateau to keep switching edges clean.
Thermal and package reality for the BOM
Maximum power dissipation is 156 W at case temperature, but the practical limit in a TO-220-3 with a typical clip-on heatsink in still air is around 2–3 W continuous — real designs need a forced-air flow or a larger bolted heatsink to use the full current rating.