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Infineon Technologies SPP15N65C3XKSA1

Infineon SPP15N65C3XKSA1 CoolMOS N-Ch MOSFET

MPNSPP15N65C3XKSA1
End of Life

Infineon CoolMOS™ SPP15N65C3XKSA1 N-channel power MOSFET, 650 V drain-source voltage, 15 A continuous drain current, 280 mOhm Rds(on) at 10 V gate drive, 63 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$1.66Ref. price · indicative, final on quote
Infineon Technologies SPP15N65C3XKSA1 datasheet (PDF)
PackagingTO-220-3
RoHSNot applicable
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPP15N65C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 675µA
Rds on (Max) @ id, vgs280mOhm @ 9.4A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 25 V

Product details

650 V CoolMOS for PFC and SMPS stages

It is specified for the 10 V gate-drive level typical of standard PWM controllers and gate-driver ICs.

Conduction and switching losses

At 15 A the Rds(on) will be higher — budget 320–350 mOhm at full current and 100°C junction — which sets the conduction loss at roughly 7–8 W for a 5 A RMS load in a PFC stage. Total gate charge is 63 nC at 10 V.

Thermal and package reality for the BOM

Maximum power dissipation is 156 W at case temperature, but the practical limit in a TO-220-3 with a typical clip-on heatsink in still air is around 2–3 W continuous — real designs need a forced-air flow or a larger bolted heatsink to use the full current rating.

Frequently asked questions

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