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Infineon Technologies SPP15N60C3XKSA1

Infineon SPP15N60C3XKSA1 CoolMOS N-Ch MOSFET

MPNSPP15N60C3XKSA1
End of Life

Infineon CoolMOS™ SPP15N60C3XKSA1, N-Channel MOSFET, 650 V Vdss, 15 A Id, 280 mOhm Rds(on) @ 9.4 A, 10 V, 63 nC Qg, TO-220-3, -55 to 150 °C.

$3.91Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPP15N60C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 675µA
Rds on (Max) @ id, vgs280mOhm @ 9.4A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1660 pF @ 25 V

Product details

Conduction and switching parametrics

Input capacitance is 1660 pF at 25 V drain-source, which together with the gate charge defines the drive current needed from the gate driver IC. The gate threshold voltage is specified at 3.9 V maximum at 675 µA, so a 10 V drive rail provides healthy overdrive for minimum Rds(on). This wide Tj window suits applications with high ambient temperatures or significant self-heating, such as enclosed power supplies or motor drives.

The through-hole leads require a 0.8 mm to 1.0 mm PCB hole diameter and benefit from a heatsink attached to the tab with a thermal interface material. For vibration-prone environments, mechanical support via a screw or clip is recommended.

Frequently asked questions

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