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Infineon Technologies SPP11N80C3XKSA1

Infineon SPP11N80C3XKSA1 CoolMOS N-Ch MOSFET

MPNSPP11N80C3XKSA1
End of Life

Infineon CoolMOS™ SPP11N80C3XKSA1, N-Channel MOSFET, 800 V Vdss, 11 A Id, 450 mOhm Rds(on) @ 7.1 A, 10 V, TO-220-3 package, -55°C to 150°C junction temperature.

$2.85Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

SPP11N80C3XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 680µA
Rds on (Max) @ id, vgs450mOhm @ 7.1A, 10V
Gate charge (Qg) (Max) @ vgs85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 100 V

Product details

The TO-220-3 through-hole package (PG-TO220-3-1) suits single-sided heatsinking in offline power supplies, PFC stages, and flyback converters where the 800 V rating provides margin for universal mains input with reflected voltage transients.

Gate charge and switching — sizing the driver

Total gate charge is 85 nC at 10 V gate drive. For a 100 kHz switching frequency the average gate-drive current needed is 8.5 mA — well within the capability of a standard MOSFET driver IC, but the peak current during the Miller plateau determines the turn-on and turn-off times. The input capacitance is 1600 pF at 100 V drain-source, which together with the gate charge gives a figure of merit (Qg × Rds(on)) of about 38 nC·Ohm — typical for this generation of CoolMOS. The maximum gate-source voltage is ±20 V, so a 10 V drive rail is the recommended operating point for minimum Rds(on). The gate threshold voltage is 3.9 V maximum at 680 µA drain current, which means the device is fully enhanced with a standard 10 V gate signal but will not turn on with a 3.3 V logic-level drive.

Thermal budget and mounting

Maximum power dissipation is 156 W at case temperature, but the junction-to-case thermal resistance must be managed with a proper heatsink. Derate the 11 A current rating above 25°C case temperature per the datasheet curve; at 100°C case the continuous current typically drops to about 7 A. The through-hole TO-220-3 package (PG-TO220-3-1) allows a single screw-mount to a heatsink with thermal compound. The tab is the drain terminal, so the heatsink must be electrically isolated or connected to the drain node.

No official successor or second-source cross-reference is listed; the IPD50R950CEAUMA1 is a different CoolMOS variant (500 V, 950 mOhm, surface-mount DPAK) and is not a pin-compatible substitute for this TO-220 device.

Frequently asked questions

What is the Rds(on) of the SPP11N80C3XKSA1?

The maximum on-resistance is 450 mOhm at 7.1 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations.

Is the SPP11N80C3XKSA1 RoHS compliant?

Yes, the SPP11N80C3XKSA1 is ROHS3 compliant.

What is the closest functional equivalent to the SPP11N80C3XKSA1?

The IPD50R950CEAUMA1 is a CoolMOS CE device but it is a 500 V, 950 mOhm, surface-mount DPAK part — it is not a pin-compatible or direct replacement for the 800 V, 450 mOhm, TO-220 SPP11N80C3XKSA1. No official second-source alternate is listed for this specific part.