560 V CoolMOS for offline power stages
The Infineon SPP08N50C3XKSA1 is an N-channel CoolMOS power MOSFET in a through-hole TO-220-3 package (PG-TO220-3-1). The 32 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies like flyback converters, PFC boost stages, and auxiliary power supplies where the 560 V breakdown provides margin for universal AC input designs.
The 600 mOhm max on-resistance at 10 V drive and 4.6 A sets the conduction loss baseline. At 7.6 A full load, expect roughly 600 mOhm × (7.6 A)² ≈ 35 W conduction loss — which consumes nearly half the 83 W dissipation limit at Tc=25°C. For hard-switching above 100 kHz, the 750 pF input capacitance at 25 V drain-source means the driver must supply about 75 nC per cycle at 10 V; budget gate drive losses accordingly.
Active lifecycle — no near-term LTB concern
There is no announced last-time-buy or end-of-life notice for this CoolMOS C3 series variant. For production BOMs that require a second-source hedge, the TO-220-3 footprint is common across the 500–600 V CoolMOS family, though no official cross-reference is listed in this record.