650 V CoolMOS™ — the offline power switch
The Infineon SPP07N60C3XKSA1 is a 650 V N-channel CoolMOS™ power MOSFET in a TO-220-3 through-hole package. The 27 nC total gate charge at 10 V keeps switching losses manageable in hard-switched topologies like flyback or PFC stages.
Junction rating — full military temperature range
The 83 W maximum power dissipation at case temperature (Tc) sets the heatsink sizing baseline — expect to derate significantly above 25 °C case.
Gate drive and switching profile
The gate threshold voltage max is 3.9 V at 350 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. Input capacitance Ciss is 790 pF at 25 V drain-source — a moderate load for a standard gate driver. The ±20 V gate-source rating gives headroom for ringing on long gate traces.
Through-hole package — no reflow, easy heatsink
The TO-220-3 (PG-TO220-3-1) is a standard leaded power package. It mounts through a hole in the PCB and can be bolted to a heatsink with a TO-220 clip or screw. No reflow profile required — hand-solder or wave-solder. The tube shipment keeps leads aligned and prevents bent pins during transit.