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Infineon Technologies SPP06N80C3XKSA1

SPP06N80C3XKSA1 CoolMOS N-Ch MOSFET, 800 V, 6 A, TO-220-3

MPNSPP06N80C3XKSA1
End of Life

Infineon CoolMOS™ SPP06N80C3XKSA1, N-Channel MOSFET, 800 V Vdss, 6 A Id, 900 mOhm Rds(on) @ 3.8 A, 10 V, 41 nC Qg, TO-220-3, -55°C to 150°C.

$2.08Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SPP06N80C3XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs900mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds785 pF @ 100 V

Product details

800 V CoolMOS for high-voltage offline power stages

It targets high-voltage switched-mode power supplies, PFC boost stages, and flyback converters where the 800 V breakdown margin handles off-line rectified voltages (up to 400 V DC bus) with derating headroom.

Total gate charge is 41 nC at 10 V, which is moderate for this voltage/current class; a gate driver capable of sourcing at least 0.5 A peak will keep switching transitions under 100 ns in a typical half-bridge layout.

Thermal and operating envelope

Input capacitance is 785 pF at 100 V drain-source — a moderate value that keeps the gate-drive energy per cycle low, benefiting efficiency at light load.

Frequently asked questions

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