Infineon CoolMOS™ SPP02N60S5, N-Channel MOSFET, 600 V Vdss, 1.8 A Id, 3 Ω Rds(on) at 10 V, TO-220-3, Through Hole, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1.8A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5.5V @ 80µA |
| Rds on (Max) @ id, vgs | 3Ohm @ 1.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 240 pF @ 25 V |
It delivers 1.8 A continuous drain current at 25°C case temperature and features a typical on-resistance of 3 Ω at 1.1 A with a 10 V gate drive. The device is built on Infineon's CoolMOS technology, which optimises the trade-off between low on-resistance and low gate charge — here 9.5 nC at 10 V — making it suited for hard-switching topologies like flyback converters and power-factor-correction stages in off-line power supplies.
Maximum on-resistance is 3 Ω at 1.1 A drain current with a 10 V gate drive.