600 V CoolMOS N-channel in a TO-220 package
The Infineon SPP02N60S5 is a 600 V N-channel CoolMOS power MOSFET in a through-hole TO-220-3 package. It delivers 1.8 A continuous drain current at 25°C case temperature and features a typical on-resistance of 3 Ω at 1.1 A with a 10 V gate drive. The device is built on Infineon's CoolMOS technology, which optimises the trade-off between low on-resistance and low gate charge — here 9.5 nC at 10 V — making it suited for hard-switching topologies like flyback converters and power-factor-correction stages in off-line power supplies.
What the key ratings mean for your design
The junction temperature range spans -55°C to 150°C, covering industrial and automotive under-hood environments. Input capacitance is 240 pF at 25 V Vds, which is low enough that a standard gate-driver IC can switch the MOSFET without a pre-driver buffer.