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Infineon Technologies SPI12N50C3IN

Infineon SPI12N50C3IN CoolMOS N-Channel MOSFET, 500 V

MPNSPI12N50C3IN
End of Life

Infineon CoolMOS™ SPI12N50C3IN, N-Channel MOSFET, 500 V Vdss, 11.6 A Id, 380 mOhm Rds(on) at 10 V, TO-262-3 (PG-TO262-3-1), Through Hole, -55 to 150 °C.

$1.04Ref. price · indicative, final on quote
Infineon Technologies SPI12N50C3IN datasheet (PDF)
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSNot applicable
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPI12N50C3IN specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11.6A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id3.9V @ 500µA
Rds on (Max) @ id, vgs380mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Product details

Rated for 500 V drain-source and 11.6 A continuous drain current at 25 °C case temperature, it targets hard-switching topologies in offline power supplies, power-factor-correction stages, and lighting ballasts where 500 V blocking and low conduction loss are required. The through-hole TO-262 package (PG-TO262-3-1) suits designs that need a soldered-in device with good thermal transfer to the heatsink via the exposed tab.

For BOM planning, this part is a straightforward line item — no LTB date to track, no forced redesign horizon.

Frequently asked questions

Is SPI12N50C3IN obsolete or end-of-life?

No, the SPI12N50C3IN is listed as active in production with no end-of-life status. It is currently available through independent distribution and can be ordered against an RFQ.

Can I use SPI12N50C3IN to replace IRFP250N?

The IRFP250N is a 200 V device; the SPI12N50C3IN is rated for 500 V, so it has higher voltage headroom. However, the gate drive requirement (10 V for rated Rds(on)) and package (TO-262 vs TO-247) differ. Electrically it can work in a 200 V circuit if the higher Rds(on) and gate charge are acceptable, but the footprint and thermal interface must be adapted.