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Infineon Technologies SPI07N65C3XKSA1

Infineon SPI07N65C3XKSA1 CoolMOS™ N-Channel MOSFET, 650 V

MPNSPI07N65C3XKSA1
End of Life

Infineon CoolMOS™ series SPI07N65C3XKSA1, N-Channel MOSFET, 650 V Vdss, 7.3 A Id, 600 mOhm Rds(on) @ 10 V, TO-262-3 (PG-TO262-3-1) through-hole package, -55°C to 150°C operating junction temperature.

$0.83Ref. price · indicative, final on quote
Infineon Technologies SPI07N65C3XKSA1 datasheet (PDF)
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPI07N65C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.3A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id3.9V @ 350µA
Rds on (Max) @ id, vgs600mOhm @ 4.6A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 25 V

Product details

650 V CoolMOS™ — what the ratings mean for the switching stage

The TO-262-3 (PG-TO262-3-1) through-hole package suits wave-soldered boards where a heatsink can be bolted to the tab.

Gate-drive and switching behaviour

The 10 V gate-drive level for the rated Rds(on) is standard for CoolMOS™; the ±20 V absolute maximum gate-source voltage gives headroom for ringing on a hard-switched node. For soft-switching topologies (LLC, phase-shifted full bridge) the 27 nC gate charge keeps the circulating energy manageable.

Thermal budget and mounting

The -55°C to 150°C junction temperature range covers cold-start in outdoor telecom cabinets and full-load thermal cycling in enclosed power supplies.

Frequently asked questions

What is the Rds(on) of SPI07N65C3XKSA1?

The maximum on-resistance is 600 mOhm at a drain current of 4.6 A with a 10 V gate drive.

Is SPI07N65C3XKSA1 RoHS compliant?

Yes, it is ROHS3 compliant per Infineon's classification.

Is SPI07N65C3XKSA1 equivalent to FQA7N65?

Both are 650 V N-channel MOSFETs in similar through-hole packages, but the FQA7N65 has a different gate-threshold voltage and package marking. Verify the gate-drive circuit and pad layout before substituting — the CoolMOS™ C3 technology also gives a different switching characteristic (lower gate charge, faster body diode recovery) that may affect EMI or dead-time timing.