650 V N-channel CoolMOS — what it is and where it fits
The Infineon SPI07N65C3 is an N-channel power MOSFET from the CoolMOS series, built for high-voltage switching applications. It handles a 650 V drain-to-source voltage and delivers 7.3 A continuous drain current at 25°C case temperature.
Rds(on) and gate charge — what they mean for the BOM
The 600 mOhm Rds(on) at 4.6 A and 10 V drive defines the conduction loss at full load. At 4.6 A, dissipation in the channel alone is within the 83 W package limit, but the heatsink still needs to keep the junction below 150°C.
Package and mounting — through-hole matters
The SPI07N65C3 comes in a TO-262-3 long-lead package (I²Pak), Infineon's PG-TO262-3-1 variant. Through-hole mounting means it goes into a PCB with the drain tab to sink heat into the board or an external heatsink.
Lifecycle and compliance — active and RoHS3
Infineon lists the SPI07N65C3 as Active in production with RoHS3 compliance. No last-time-buy notice, no end-of-life risk for current designs. The CoolMOS series has been around long enough that the process is mature, and Infineon typically supports these parts for years. For a BOM line that needs a 650 V N-channel FET in a through-hole package, this one is a safe call for both new builds and production replenishment.