Skip to main content
Log in
Infineon Technologies SPD50N03S2L

Infineon SPD50N03S2L CoolMOS™ N-Channel MOSFET, 30 V, 50 A

MPNSPD50N03S2L
End of Life

Infineon CoolMOS™ SPD50N03S2L, N-channel power MOSFET, 30 V Vdss, 50 A continuous drain, 6.4 mOhm Rds(on) max at 10 V, surface-mount PG-TO252 package.

$0.35Ref. price · indicative, final on quote
Infineon Technologies SPD50N03S2L datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSNot applicable
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPD50N03S2L specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 85µA
Rds on (Max) @ id, vgs6.4mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2530 pF @ 25 V

Product details

Gate drive and switching parasitics

The 4.5 V drive voltage for minimum Rds(on) means it can run from a 5 V logic-level gate signal, though the full 10 V drive delivers the rated 6.4 mOhm. The ±20 V Vgs max gives headroom for gate-drive overshoot in hard-switching topologies.

Thermal budget and package

Maximum power dissipation is 136 W at the case, but the junction-to-ambient thermal path through the PG-TO252 (DPak) surface-mount package limits practical continuous dissipation on a standard PCB.

Frequently asked questions

What is the exact Rds(on) of SPD50N03S2L at 10 V?

Maximum Rds(on) is 6.4 mOhm at 50 A drain current with 10 V gate drive. This is the guaranteed limit at 25 °C junction temperature; actual on-resistance increases with temperature per the normalised curve in the datasheet.