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Infineon Technologies SPD50N03S2-07 G

SPD50N03S2-07 G - Infineon Technologies

MPNSPD50N03S2-07 G
End of Life

N-CHANNEL POWER MOSFET

$0.68Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSNot applicable
SeriesOptiMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPD50N03S2-07 G specifications
ParameterValue
SeriesOptiMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 85µA
Rds on (Max) @ id, vgs7.3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs46.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2170 pF @ 25 V