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Infineon Technologies SPD30P06PGBTMA1

Infineon SPD30P06PGBTMA1 P-Channel MOSFET, 60V 30A, AEC-Q101

MPNSPD30P06PGBTMA1
End of Life

Infineon SIPMOS P-Channel MOSFET, SPD30P06PGBTMA1, 60V Vdss, 30A Id, 75mOhm Rds(on) at 10V, AEC-Q101, TO-252-3 (DPak), -55°C to 175°C.

$1.71Ref. price · indicative, final on quote
Infineon Technologies SPD30P06PGBTMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPD30P06PGBTMA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 1.7mA
Rds on (Max) @ id, vgs75mOhm @ 21.5A, 10V
Gate charge (Qg) (Max) @ vgs48 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1535 pF @ 25 V

Product details

On-resistance and gate drive — what 75 mOhm at 10 V means

The SPD30P06PGBTMA1: Maximum Rds(on) is 75 mOhm at 21.5 A drain current with 10 V gate drive. Gate charge is 48 nC at 10 V. A 10 V gate driver delivering 1 A can switch the FET in roughly 48 ns, though the actual switching loss depends on the gate drive circuit impedance and the Miller plateau.

Temperature range and automotive qualification

Operating junction temperature range is -55°C to 175°C, covering under-hood and engine-bay environments. AEC-Q101 qualification means the part has passed the full suite of automotive stress tests. The PG-TO252-3 package is the Infineon lead-free DPak variant, ROHS3 compliant.

Frequently asked questions

Is SPD30P06PGBTMA1 AEC-Q101 qualified for automotive use?

Yes, the SPD30P06PGBTMA1 carries AEC-Q101 qualification, which is the automotive-grade stress test standard for discrete semiconductors. It is suitable for under-hood and chassis-domain applications where the junction temperature can reach 175°C.

What is the Rds(on) of SPD30P06PGBTMA1 at 10V gate drive?

Maximum Rds(on) is 75 mOhm at 21.5 A drain current with 10 V gate-source voltage. This is the value used for worst-case conduction loss calculations in the power stage.