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Infineon Technologies SPD30P06PGBTMA1

Infineon SPD30P06PGBTMA1 P-Channel MOSFET, 60V 30A, AEC-Q101

MPNSPD30P06PGBTMA1
End of Life

Infineon SIPMOS P-Channel MOSFET, SPD30P06PGBTMA1, 60V Vdss, 30A Id, 75mOhm Rds(on) at 10V, AEC-Q101, TO-252-3 (DPak), -55°C to 175°C.

$1.71Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SPD30P06PGBTMA1 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 1.7mA
Rds on (Max) @ id, vgs75mOhm @ 21.5A, 10V
Gate charge (Qg) (Max) @ vgs48 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1535 pF @ 25 V

Product details

On-resistance and gate drive — what 75 mOhm at 10 V means

The SPD30P06PGBTMA1: Maximum Rds(on) is 75 mOhm at 21.5 A drain current with 10 V gate drive. The 125 W power dissipation rating at case temperature gives headroom, but the PCB copper area under the tab sets the real thermal limit. Gate charge is 48 nC at 10 V. A 10 V gate driver delivering 1 A can switch the FET in roughly 48 ns, though the actual switching loss depends on the gate drive circuit impedance and the Miller plateau. The ±20 V maximum gate-source rating allows direct drive from a 12 V automotive rail without a series zener.

Temperature range and automotive qualification

Operating junction temperature range is -55°C to 175°C, covering under-hood and engine-bay environments. AEC-Q101 qualification means the part has passed the full suite of automotive stress tests. The PG-TO252-3 package is the Infineon lead-free DPak variant, ROHS3 compliant.

Frequently asked questions

Is SPD30P06PGBTMA1 AEC-Q101 qualified for automotive use?

Yes, the SPD30P06PGBTMA1 carries AEC-Q101 qualification, which is the automotive-grade stress test standard for discrete semiconductors. It is suitable for under-hood and chassis-domain applications where the junction temperature can reach 175°C.

What is the Rds(on) of SPD30P06PGBTMA1 at 10V gate drive?

Maximum Rds(on) is 75 mOhm at 21.5 A drain current with 10 V gate-source voltage. This is the value used for worst-case conduction loss calculations in the power stage.