Infineon Technologies · SIPMOS® Series
Infineon SIPMOS® SPD18P06PGBTMA1, P-Channel MOSFET, 60V Vdss, 18.6A continuous drain at 25°C, 130mOhm Rds(on) max at 13.2A/10V, 33nC gate charge, -55°C to 175°C junction, PG-TO252-3 (DPak) surface mount.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SIPMOS® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18.6A (Tc) |
| Power dissipation | 80W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 130mOhm @ 13.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 860 pF @ 25 V |
The Infineon SPD18P06PGBTMA1 is a P-channel enhancement-mode MOSFET from the SIPMOS® trench family, built for high-side load switching and reverse-polarity protection in 12 V to 48 V systems.
That extra headroom matters when the part sits near a motor winding or in an engine bay where ambient can push 105°C and self-heating adds another 40–50°C.
ROHS3 compliant per.
