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Infineon Technologies SPD15P10PLGBTMA1
Infineon Technologies

Infineon SPD15P10PLGBTMA1 P-Channel MOSFET, 100V 15A TO-252

MPNSPD15P10PLGBTMA1
End of Life

Infineon SIPMOS P-Channel MOSFET, 100V Vdss, 15A Id, 200mOhm Rds(on) at 10V, TO-252-3 (DPak) surface mount, -55°C to 175°C junction temperature.

$2.17Ref. price · indicative, final on quote
SPD15P10PLGBTMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SPD15P10PLGBTMA1 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation128W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 1.54mA
Rds on (Max) @ id, vgs200mOhm @ 11.3A, 10V
Gate charge (Qg) (Max) @ vgs62 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1490 pF @ 25 V

Product details

P-channel switch for 100 V bus rails

The SPD15P10PLGBTMA1 is a P-Channel MOSFET with 100 V drain-source voltage and 15 A continuous drain current, in a TO-252-3 (DPak) surface-mount package.

Gate drive and switching speed

Gate charge is 62 nC at 10 V. Input capacitance is 1490 pF at 25 V drain-source.

Temperature range and mounting

The TO-252-3 (DPak) surface-mount package has a tab that is the drain; the PCB copper area under the tab sets the thermal resistance. Power dissipation is rated at 128 W at case temperature, but that is with the tab soldered to a large copper plane — in a real layout, derate for the board's thermal capability.

Sourcing and lifecycle

ROHS3 compliant. No last-time-buy or end-of-life notice on file. No official second-source or cross-reference is listed in the Infineon documentation — the IPD50R950CEAUMA1 is an N-channel CoolMOS part at 500 V, not a functional substitute for this P-channel 100 V device.

Frequently asked questions

Is SPD15P10PLGBTMA1 suitable for high-frequency switching circuits?

With 62 nC gate charge and 1490 pF input capacitance, this part is not optimised for high-frequency switching above 100 kHz. It works well for PWM up to about 50 kHz with a standard gate driver. For higher frequencies, look at a lower-gate-charge P-channel MOSFET.