100 V P-channel — the high-side switch that simplifies gate drive
The Infineon SPD15P10PGBTMA1 is a SIPMOS P-channel MOSFET in a PG-TO252-3 (DPak) surface-mount package. At full-rated current the dissipation reaches about 27 W, which the 128 W package power rating can handle provided the PCB copper and airflow manage the junction temperature within the -55 °C to 175 °C operating range.
AEC-Q101 — the automotive procurement gate
For a buyer placing this on a BOM for an ECU, ADAS module, or body controller, the AEC-Q101 mark is non-negotiable — it is the evidence the tier-1 or OEM quality team will audit. ROHS3 compliance is confirmed, with no exemptions that would block EU or China RoHS declarations.
Gate drive and switching — what the 48 nC total gate charge means
For a 100 kHz switching frequency, the gate drive current needed is Qg × f = 48 nC × 100 kHz = 4.8 mA average, which a standard gate driver IC can supply without a pre-driver stage. The recommended drive voltage for achieving the rated Rds(on) is 10 V. The gate is rated to ±20 V maximum, so the 10 V drive leaves a 10 V safety margin against ringing on the gate node in a noisy automotive environment.