P-channel load switch for 48 V and automotive rails
The Infineon SPD09P06PLGBTMA1 is a SIPMOS P-channel MOSFET rated for 60 V drain-to-source and 9.7 A continuous drain current at a 25 °C case temperature. The 250 mOhm maximum on-resistance at 6.8 A, 10 V gate drive sets the conduction loss floor for a high-side load switch or reverse-polarity protection circuit. The -55 to 175 °C junction temperature range suits under-hood automotive and industrial environments where ambient exceeds 85 °C.
Gate drive and switching budget
Total gate charge is 21 nC at 10 V, with input capacitance of 450 pF at 25 V drain-source. The drive voltage range spans 4.5 V to 10 V, so a 5 V logic-level gate driver can turn the FET fully on, though the 10 V drive yields the lowest Rds(on). A 21 nC gate charge at 100 kHz switching frequency draws about 2.1 mA average from the driver, well within a standard gate driver's output capability.
Package and thermal path
Housed in a TO-252-3 (DPak) surface-mount package with the supplier device code PG-TO252-3. The tab is the drain terminal; the copper pad area on the PCB under the tab sets the junction-to-ambient thermal resistance. Maximum power dissipation is 42 W at the case temperature, but the real-world limit depends on board copper and airflow.
Lifecycle and compliance
ROHS3 compliant.