SPD09P06PLGBTMA1

Infineon Technologies · SIPMOS® Series

Infineon SIPMOS P-Channel MOSFET, SPD09P06PLGBTMA1, 60 V Vdss, 9.7 A continuous drain at 25 °C, 250 mOhm max Rds(on) at 10 V, TO-252-3 (DPak) surface mount, -55 to 175 °C junction temperature.

Infineon Technologies SPD09P06PLGBTMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SPD09P06PLGBTMA1 specifications
Parameter / AttributeSpecification / Value
SeriesSIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9.7A (Tc)
Power dissipation42W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 6.8A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 25 V

Technical details

P-channel load switch for 48 V and automotive rails

The Infineon SPD09P06PLGBTMA1 is a SIPMOS P-channel MOSFET rated for 60 V drain-to-source and 9.7 A continuous drain current at a 25 °C case temperature.

The drive voltage range spans 4.5 V to 10 V, so a 5 V logic-level gate driver can turn the FET fully on, though the 10 V drive yields the lowest Rds(on). A 21 nC gate charge at 100 kHz switching frequency draws about 2.1 mA average from the driver, well within a standard gate driver's output capability.

Housed in a TO-252-3 (DPak) surface-mount package with the supplier device code PG-TO252-3. Maximum power dissipation is 42 W at the case temperature, but the real-world limit depends on board copper and airflow.

ROHS3 compliant.

SPD09P06PLGBTMA1
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