P-channel power switch with 60 V headroom
The SPD08P06PGBTMA1: The 300 mOhm max on-resistance at 6.2 V gate drive allows operation with a logic-level gate signal.
Total gate charge is 13 nC at 10 V. Input capacitance is 420 pF at 25 V drain-source.
Infineon SPD08P06PGBTMA1 P-Channel MOSFET, 60V, 8.83A
MPNSPD08P06PGBTMA1
End of Life
Infineon SIPMOS® P-Channel MOSFET, SPD08P06PGBTMA1, 60 V Vdss, 8.83 A continuous drain, 300 mOhm Rds(on) max at 6.2 V gate drive, 13 nC gate charge, TO-252-3 (DPak) surface-mount package.
$0.89Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6.2V |
| Current - continuous drain (Id) @ 25°C | 8.83A (Ta) |
| Power dissipation | 42W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 300mOhm @ 10A, 6.2V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 420 pF @ 25 V |
Product details
Frequently asked questions
What package does SPD08P06PGBTMA1 come in?
It is supplied in a TO-252-3 (DPak) surface-mount package, also designated PG-TO252-3. The ordering options include Tape & Reel and Cut Tape.