100V P-channel in a TO-252 — what this switch is for
The Infineon SPD04P10PGBTMA1 is a P-Channel SIPMOS® MOSFET rated for 100V drain-source and 4A continuous drain current at 25°C case temperature. It comes in a surface-mount TO-252-3 (DPak) package, PG-TO252-3 per Infineon's naming. The 1Ω maximum on-resistance is specified at 10V gate drive, so this is not a logic-level part — the design needs a 10V rail or a gate-driver stage to turn it on fully. With a 175°C maximum junction temperature, it handles high-ambient environments like industrial power supplies, motor pre-drive circuits, or automotive auxiliary loads where a P-channel high-side switch is preferred.
Gate drive and switching — 10V required, 12nC Qg
The gate threshold voltage is 4V maximum at 380µA drain current. The rated Rds(on) of 1Ω is measured at 10V Vgs.
Thermal and package — 38W dissipation, TO-252 footprint
Maximum power dissipation is 38W at case temperature, so the board copper area and any heatsinking on the TO-252 tab matter. The operating junction temperature range of -55°C to 175°C covers military-grade cold and industrial hot — this FET can sit in an outdoor telecom cabinet or an engine bay without derating at the low end. The TO-252 (DPak) footprint is common; the tab is the drain, so PCB layout for the high-side switch needs a wide copper pour for thermal relief.
Lifecycle and compliance — active, ROHS3, no LTB risk
The SPD04P10PGBTMA1 is listed as Active with ROHS3 compliance. That means it's a safe choice for a new BOM line or a production sustainment buy — no imminent obsolescence to plan around.