Infineon CoolMOS™ SPD04N80C3ATMA1, N-Channel MOSFET, 800 V Vdss, 4 A Id, 1.3 Ohm Rds(on) @ 2.5 A, 10 V, 31 nC Qg, DPAK (TO-252-3), -55°C to 150°C TJ.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 63W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.9V @ 240µA |
| Rds on (Max) @ id, vgs | 1.3Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 570 pF @ 100 V |
Maximum on-resistance is 1.3 Ohm at 2.5 A and 10 V gate drive. Gate charge is 31 nC at 10 V.
On-resistance is 1.3 Ohm. Gate charge is 31 nC. Input capacitance is 570 pF at 100 V Vds.
DPAK (TO-252-3) surface-mount power package. Maximum power dissipation is 63 W at case temperature.
It is ROHS3 compliant.
Engineers need to verify pinout, electrical characteristics, and thermal data before design.
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