600 V CoolMOS for high-voltage switching
The SPD03N60S5XT: It comes in a TO-252-3 (DPak) surface-mount package with the supplier device package PG-TO252-3-313. This is a high-voltage MOSFET from Infineon's CoolMOS™ series, designed for efficient switching in power conversion circuits.
On-resistance and gate drive — sizing the switching loss
Rds(on) is specified at 1.4 Ohm maximum with 2 A drain current and 10 V gate drive. That 10 V drive voltage is the recommended level for achieving the rated on-resistance. The gate charge is 16 nC at 10 V, which keeps the switching losses manageable in a flyback or PFC stage running at moderate frequency. Input capacitance measures 420 pF at 25 V Vds, giving a reasonable drive burden for a controller with a standard totem-pole output.
Temperature range and thermal budget
Maximum power dissipation is 38 W at the case, but that figure assumes an ideal heatsink — real-world dissipation will be lower and depends on the PCB copper area and airflow around the DPak tab. The 3.2 A continuous rating is at 25°C case; derate linearly above that temperature.
Lifecycle and sourcing posture
For volume BOM commitments, the active status gives confidence in ongoing supply without last-time-buy pressure.