Gate charge and switching speed
The SPD03N60C3ATMA1: Total gate charge is 17 nC at 10 V Vgs. Input capacitance is 400 pF at 25 V drain-source.
Thermal and package realities
Maximum power dissipation is 38 W at case temperature Tc.
Infineon SPD03N60C3ATMA1 N-Channel MOSFET
MPNSPD03N60C3ATMA1
End of Life
Infineon CoolMOS C3 series SPD03N60C3ATMA1, N-Channel MOSFET, 600 V Vdss, 3.2 A Id, 1.4 Ohm Rds(on) at 2 A, 10 V, ±20 V Vgs, 17 nC gate charge, TO-252-3 (DPak) surface mount, -55 to 150 °C junction.
$1.53Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Tc) |
| Power dissipation | 38W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.9V @ 135µA |
| Rds on (Max) @ id, vgs | 1.4Ohm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 400 pF @ 25 V |
Product details
Frequently asked questions
What is the Rds(on) of SPD03N60C3ATMA1?
The maximum on-resistance is 1.4 Ohm at 2 A drain current and 10 V gate drive.
Is SPD03N60C3ATMA1 suitable for a 600V flyback converter?
Yes — the 600 V drain-source rating and 3.2 A continuous current are appropriate for a 30–60 W offline flyback. The 17 nC gate charge keeps switching losses manageable at 100 kHz. Derate the current above 25°C and ensure the PCB copper area under the DPak tab is adequate for the dissipation.